• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention relates to an electrostatic chuck which is mounted inside a chamber and controls the holding and temperature of a wafer, wherein the cooling unit has a larger area than the wafer and the electrostatic chuck body each includes an electrostatic chuck electrode. Wow; A helium channel panel positioned above the electrostatic chuck body and having a predetermined groove pattern on an upper surface on which the wafer is seated; A cooling solvent inlet tube and a cooling solvent outlet tube for introducing and cooling the cooling solvent into the cooling unit, respectively; A DC voltage rod for applying a DC voltage to the electrostatic chuck electrode; It provides an electrostatic chuck including a helium inlet tube and a helium outlet tube for introducing and exiting helium, respectively, in the groove pattern.
    公开号:KR20030043013A
    申请号:KR1020010073969
    申请日:2001-11-26
    公开日:2003-06-02
    发明作者:권기청；변홍식；김홍습
    申请人:주성엔지니어링(주)；
    IPC主号:
    专利说明:

    Electrostatic chuck
    [14] BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to an electrostatic chuck mounted in a chamber, which is a semiconductor manufacturing apparatus, for holding a wafer seated on an upper surface thereof and controlling a temperature thereof.
    [15] In recent years, with the development of science, the field of new materials, which enables the development and processing of new materials, has been rapidly developed, and the development results of these materials are driving the development of the semiconductor industry.
    [16] A semiconductor device is a large scale integration (LSI) that is implemented through a process of depositing and patterning a thin film several times on an upper surface of a wafer, and processes such as the deposition and patterning of the thin film described above. Proceeds in a chamber which is typically a closed reaction vessel.
    [17] The chuck is a device installed inside the chamber to fix the wafer to be supplied in a single sheet. In such a chuck, a vacuum chuck or a direct current voltage is applied at the center of the wafer to fix the wafer. Electrostatic chucks which apply to form an electrostatic field and fix the wafer by electrostatic interaction between the electrostatic field and the wafer are utilized.
    [18] In particular, the electrostatic chuck has excellent characteristics compared to other chucks, and is currently widely used in etching or chemical vapor deposition (CVD) apparatuses, and in the semiconductor manufacturing process performed in the aforementioned chamber, Temperature control of the wafer has an important influence on the characteristics of the finished device, that is, the uniformity, line width, profile, and repeatability of the semiconductor device. Therefore, a general electrostatic chuck includes a plurality of devices for temperature control of a wafer seated on an upper surface thereof, which will be described in detail with reference to the accompanying drawings.
    [19] In this case, the general electrostatic chuck may have a certain degree of deformation in the arrangement and configuration of the internal components according to the purpose, but since it is common in terms of their purpose and function, the electrostatic chuck is mounted in a plasma processing chamber for processing a wafer through plasma. An electrostatic chuck will be described as an example.
    [20] 1 is a cross-sectional view illustrating a structure of a general electrostatic chuck 30, in which a cooling unit 38, an RF electrode 34, and an electrostatic chuck electrode 40 are mounted therein, respectively. In addition, the electrostatic chuck 30, which is not shown, is further coupled to the bellows (bellows) that is installed to be able to move through the bottom of the chamber, although not shown, The wafer 1 is seated on an upper surface thereof, that is, an upper surface of the helium channel panel 32.
    [21] At this time, the electrostatic chuck electrode 40 is connected to a DC voltage rod 41 for applying a DC voltage from the outside to form an electric field to hold the wafer 1 more closely, and is installed inside the electrostatic chuck body 36. The cooling unit 38 is a cooling solvent path having a diameter corresponding to that of the wafer 1 seated on the upper surface of the helium flow channel panel 132, which will be described later. The pipe 39a and the cooling solvent outlet pipe 39b for flowing out the cooling solvent circulated by the cooling unit 38 are connected to control the temperature of the wafer 1 by storing and circulating the cooling solvent therein. do.
    [22] In addition, one end of the RF voltage rod 35 is connected to the RF electrode 34, and the other end thereof is a grounded RF power source 54 and an RF electrode 34 serving as a load for the high frequency power generated from the RF power source 54. The bias source 50 including the impedance matching device 52 for maximum transmission to the) is provided, thereby controlling the impact of plasma ions by supplying a voltage to the RF electrode 34.
    [23] The helium flow channel panel 32 coupled to the upper end of the electrostatic chuck body 36 assists the temperature control of the wafer 1 by circulating helium gas at the interface with the wafer 1 seated on its upper surface. The helium flow path panel 32 has a helium flow path through which helium gas can be circulated, that is, a groove pattern (not shown) is formed, and helium flows in each of the groove patterns to introduce helium gas from the outside. The inflow pipe 33a and the helium outflow pipe 33b which flow out it are connected.
    [24] Accordingly, the helium gas introduced through the helium inlet tube 33a is circulated through the groove pattern and then discharged to the outside through the helium outlet tube 33b while controlling the temperature through the heat conduction shape with the wafer 1. Will assist.
    [25] The general electrostatic chuck 30 described above includes the helium inlet tube 33a and the helium outlet tube 33b, the cooling solvent inlet tube 39a and the outlet tube 39b, and the RF voltage rod according to the type thereof. 35) and the DC voltage bar 41, the RF electrode 134 and the electrostatic chuck electrode 40 may have a certain degree of difference in position or arrangement order, but generally has a similar structure.
    [26] However, the general electrostatic chuck 30 having such a configuration exhibits some fatal problems in use, which is a temperature gradient between the central portion and the edge portion in cooling the wafer 1 seated on the upper surface of the electrostatic chuck 130. This is a burning phenomenon of the photoresist.
    [27] That is, in the cooling of the wafer 1 through the cooling unit 38 described above, the temperature transfer between the cooling unit 38 and the wafer 1 is not smooth in the chamber having a normal vacuum environment, and thus the electrostatic chuck 30 Helium is circulated between the upper surface, in particular the helium flow channel panel 32 and the back surface of the wafer 1 to transfer the temperature of the cooling unit to the wafer 1 through the cooling, and the helium circulation is relatively The edge of the wafer 1 is not smoother than the center of the wafer 1 so that burning, uneven processing and processing of the photoresist occur.
    [28] This is particularly a serious problem for large wafers having a diameter of 300 mm or more. In recent years, a method of increasing the size of a wafer to 300 mm or more larger than the conventional diameter of 200 mm has been widely used for higher productivity. . However, in manufacturing a semiconductor device through such a large wafer having a diameter of 300 mm or more, the temperature gradient of the center and the edge portion of the wafer appearing in the general electrostatic chuck 30 described above is further intensified.
    [29] In other words, since the cooling unit 134 mounted inside the general electrostatic chuck 30 has the same or similar area as the wafer 1, the cooling unit 134 extends only to the edge of the wafer 1, and thus helium The temperature gradient is generated between the edge portion and the center portion of the wafer 1, which is not smoothly circulated, which is further deepening as the area of the electrostatic chuck 30 is enlarged.
    [30] As a result, such a temperature gradient of the wafer becomes a serious cause that threatens the reliability of the device by lowering uniformity, line width, profile or reproducibility of the finished device by making it impossible to process and process correctly.
    [31] The present invention has been made to solve the above problems, and an object of the present invention is to provide an electrostatic chuck that overcomes the temperature gradient of the center and the edge of the wafer and enables more uniform cooling.
    [1] 1 is a cross-sectional view showing the structure of a typical electrostatic chuck
    [2] 2 is a cross-sectional view showing the structure of an electrostatic chuck according to the present invention;
    [3] 3 is a conceptual view showing a comparison between the cooling unit and the wafer embedded in the electrostatic chuck body according to the present invention.
    [4] <Description of the symbols for the main parts of the drawings>
    [5] 1: wafer 130: electrostatic chuck
    [6] 132 helium euro panel
    [7] 133a, 133b: helium inlet and helium outlet
    [8] 134: RF electrode 135: RF voltage rod
    [9] 136: electrostatic chuck body 138: cooling unit
    [10] 139a, 139b: cooling solvent inlet and cooling solvent outlet
    [11] 140: electrostatic chuck electrode 141: DC voltage rod
    [12] 150: bias source 152: impedance matching device
    [13] 154: RF power
    [32] The present invention relates to an electrostatic chuck mounted inside a chamber to control the holding and temperature of a wafer, in order to achieve the above object, a cooling unit having a larger area than the wafer, and an electrostatic An electrostatic chuck body each having a chuck electrode; A helium channel panel positioned above the electrostatic chuck body and having a predetermined groove pattern on an upper surface on which the wafer is seated; A cooling solvent inlet tube and a cooling solvent outlet tube for introducing and cooling the cooling solvent into the cooling unit, respectively; A DC voltage rod for applying a DC voltage to the electrostatic chuck electrode; It provides an electrostatic chuck including a helium inlet tube and a helium outlet tube for introducing and exiting helium, respectively, in the groove pattern.
    [33] At this time, the cooling unit is characterized in that the area extending along the edge of the wafer, the wafer seated on the upper surface of the electrostatic chuck is characterized in that the diameter of 300mm or more.
    [34] In addition, the present invention is an RF electrode mounted inside the electrostatic chuck; An RF voltage rod having one end connected to the RF electrode; An electrostatic chuck further includes a bias source including an impedance matching device and an RF power supply connected to the other end of the RF voltage bar.
    [35] DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
    [36] The cooling unit mounted inside the electrostatic chuck according to the present invention has a larger area than the wafer, and has a shape in which the cooling unit extends outside the edge of the wafer. The cross section of the electrostatic chuck according to the present invention is shown in FIG. 2. It was.
    [37] At this time, in the following, the electrostatic chuck applied to the plasma processing chamber for processing the wafer using a plasma as an example, but the present invention is not limited to this, various modifications are possible to those skilled in the art through the following description It will be self-evident.
    [38] The electrostatic chuck 130 according to the present invention may be divided into an electrostatic chuck body 136 and a helium flow channel panel 132 of a metal material coupled to an upper end of the electrostatic chuck body 136. Although not shown) is installed on the bellows is installed so as to penetrate through the bottom of the chamber, the wafer 1 is seated on its upper surface, in particular the upper surface of the helium channel panel 132.
    [39] At this time, the cooling unit 138, the RF electrode 134, and the electrostatic chuck electrode 140 are installed in the interior of the electrostatic chuck body 136. First, the cooling unit installed inside the electrostatic chuck body 136 ( 138 is respectively connected with a cooling solvent inlet tube 139a for introducing a cooling solvent from the outside and a cooling solvent outlet tube 139b for outflowing the cooling solvent circulated by the cooling unit 138, and cooling therein By storing and circulating the solvent, a method of controlling the temperature of the wafer 1 is used.
    [40] In this case, the above-described RF electrode 134 may be an electrostatic chuck body 136 made of aluminum.
    [41] In addition, the electrostatic chuck electrode 140 is connected to a DC voltage rod 141 to which a DC voltage is applied from an external DC power supply (not shown), thereby forming an electric field for tightly holding the wafer, and the RF electrode 134. And a bias source 150 including an RF voltage rod 135 having one end connected thereto, an impedance matching device 152 electrically connected to the other end of the RF voltage rod 135, and an RF power source 154. The degree of impact of ions onto the wafer is controlled.
    [42] In this case, the present invention is characterized in that the cooling unit 138 is significantly larger than the general case, so that the cooling unit 138 is substantially extended to the outside of the edge of the wafer 1 to have the maximum area. Referring to FIG. 3, which is a conceptual view illustrating a comparison of the cooling unit 138 and the wafer 1 according to the present invention, the cooling unit 138 has an enlarged area to protrude along the outer edge of the wafer 1. It can be confirmed that
    [43] In this case, preferably, the cooling unit 138 may be configured to expand the cooling unit of a general electrostatic chuck. In this case, the material constituting the electrostatic chuck, usually aluminum (Al), overcomes the difference between the environment of the electrostatic chuck and the chamber. In order to achieve this, the cooling unit 138 is extended such that the side thickness of the electrostatic chuck body 138 defining the cooling unit 138 is about 5 mm.
    [44] In addition, the electrostatic chuck body 136 in which the cooling unit 138, the RF electrode 134, and the electrostatic chuck electrode 140 are installed therein includes a helium flow channel panel 132 coupled to an upper end thereof. The helium channel panel 132 assists in temperature control of the wafer 1 by circulating helium gas at the boundary with the wafer 1 seated on its upper surface.
    [45] To this end, a groove pattern (not shown), which is a helium flow path through which helium gas is circulated, is formed on an upper surface of the helium flow channel panel 132, and a helium inflow pipe 133a for introducing helium gas from the outside into each of the groove patterns ) And a helium outlet pipe 133b for discharging it are connected. Accordingly, the helium gas introduced through the helium inlet tube 133a controls the temperature of the wafer 1 through the process of circulating the groove pattern and discharged to the outside through the helium outlet tube 133b.
    [46] The operation of the electrostatic chuck 130 according to the present invention having the structure described above will be described with reference to FIGS. 2 and 3. First, the wafer 1 is seated on the upper surface of the electrostatic chuck 130 installed in the chamber, and the inside By applying a direct current voltage to the electrostatic chuck electrode 140 of the to form an electric field to hold the wafer 1 closely.
    [47] After the process gas is supplied to the inside of the chamber and the reaction proceeds, in order to prevent the temperature of the wafer 1 from being excessively overheated and damaged during the process, it is embedded in the electrostatic chuck body 136 as the process proceeds. The driven cooling unit 138 is driven. This circulates the cooling solvent in the cooling unit 138 through a process of flowing out the cooling solvent through the cooling solvent outlet pipe 139b while supplying the cooling solvent to the cooling unit 138 through the cooling solvent inlet pipe 139a. In this case, since the cooling unit 138 according to the present invention has an area substantially extended along the edge of the wafer 1, the cooling portion 138 may have an area of the edge portion of the wafer which may occur when processing and processing the wafer through a general electrostatic chuck. The burning phenomenon can be effectively controlled.
    [48] At this time, helium is introduced through the helium inlet tube 133a to assist cooling of the wafer 1 and circulates helium along the groove pattern formed between the top surface of the helium flow channel panel 132 and the back surface of the wafer 1, The circulated helium leaks the helium outlet pipe 133b.
    [49] Meanwhile, when the electrostatic chuck is mounted inside the chamber for processing a wafer using plasma, the electrode 134 and the bias source 150 for applying the RF voltage thereto are further included in the electrostatic chuck. In this way, the degree of impact of plasma ions onto the wafer is controlled to realize a more improved thin film.
    [50] The present invention has an advantage that the cooling portion is substantially larger than the wafer, and the cooling portion is installed to extend along the edge of the wafer, thereby sufficiently eliminating the burning phenomenon of the edge portion of the wafer, which may occur in general electrostatic chucks. have.
    [51] The present invention can be implemented through a relatively simple modification to a general electrostatic chuck, but the advantages that can be obtained are very large, that is, by further extending the size of the cooling unit installed inside the general electrostatic chuck, substantially the edge of the wafer. By configuring to extend to the outside it is possible to effectively prevent the temperature gradient of the wafer, thereby reducing the inlet pressure of helium to assist the temperature control of the wafer by the cooling unit.
    [52] This, in turn, allows for tighter fixation and cooling of the wafer, thus enabling more reliable fabrication of the device. In particular, the present invention is particularly advantageous when applied to large wafers having a diameter of 300 mm or more. Could be.
    权利要求:
    Claims (4)
    [1" claim-type="Currently amended] The present invention relates to an electrostatic chuck mounted inside a chamber to control the holding and temperature of a wafer.
    A cooling unit having an area larger than that of the wafer, and an electrostatic chuck body each having an electrostatic chuck electrode embedded therein;
    A helium channel panel positioned above the electrostatic chuck body and having a predetermined groove pattern on an upper surface on which the wafer is seated;
    A cooling solvent inlet tube and a cooling solvent outlet tube for introducing and cooling the cooling solvent into the cooling unit, respectively;
    A DC voltage rod for applying a DC voltage to the electrostatic chuck electrode;
    A helium inlet tube and a helium outlet tube for introducing helium into and out of the groove pattern, respectively
    Electrostatic chuck including
    [2" claim-type="Currently amended] The method according to claim 1,
    The cooling unit has an electrostatic chuck having an area extended along the edge of the wafer.
    [3" claim-type="Currently amended] The method according to claim 1,
    The wafer seated on the top surface of the electrostatic chuck is a large wafer whose diameter is 300 mm or more.
    [4" claim-type="Currently amended] The method according to claim 1,
    An RF electrode mounted inside the electrostatic chuck;
    An RF voltage rod having one end connected to the RF electrode;
    A bias source including an impedance matching device and an RF power supply connected to the other end of the RF voltage bar;
    Electrostatic chuck
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    2001-11-26|Application filed by 주성엔지니어링(주)
    2001-11-26|Priority to KR1020010073969A
    2003-06-02|Publication of KR20030043013A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1020010073969A|KR20030043013A|2001-11-26|2001-11-26|Electrostatic chuck|
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